Current sensing IGBT for future intelligent power module

M. Kudoh, Y. Hoshi, S. Momota, T. Fujihira, K. Sakurai
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引用次数: 20

Abstract

The effect of the structure of current sensing IGBT on the temperature dependence of current sensing ratio has been investigated to improve the accuracy of over-current protection in intelligent power modules. The operation physics of the current sensing IGBT analyzed by computer simulation and experimental results of the improved performance of the current sensing IGBT are presented.
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面向未来智能电源模块的电流传感IGBT
为了提高智能功率模块过流保护的精度,研究了电流传感IGBT的结构对电流传感比温度依赖性的影响。通过计算机仿真分析了电流传感IGBT的工作原理,并给出了改进后电流传感IGBT性能的实验结果。
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Bonded SOI technologies for high voltage applications Design considerations and characteristics of rugged punchthrough (PT) IGBTs with 4.5 kV blocking capability Two-dimensional analysis of surge response in thyristor lightning surge protection devices Grounded-trench-MOS structure assisted normally-off bipolar-mode power FET Experimental verification of large current capability of lateral IEGTs on SOI
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