M. Martinez, M. Durlam, D. Halchin, R. Burton, J. Huang, S. Tehrani, A. Reyes, D. Green, N. Cody
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引用次数: 14
Abstract
A fundamental change in gate formation to a filled gate process was combined with changes in film deposition. The resulting p-HEMT manufacturing process gives much better performance for low-voltage RF amplification. At a drain voltage of 3.5 V, a 12-mm periphery device fabricated by this method is capable of 33 dBm output power with an associated power-added efficiency of greater than 75%.
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