Y. Nishi, K. Abe, J. Ribo, B. Roederer, A. Gopalan, M. Benmansour, A. Ho, A. Bhoi, M. Konishi, R. Moriizumi, V. Pathak, S. Gondi
{"title":"An ASIC-Ready 1.25–6.25Gb/s SerDes in 90nm CMOS with multi-standard compatibility","authors":"Y. Nishi, K. Abe, J. Ribo, B. Roederer, A. Gopalan, M. Benmansour, A. Ho, A. Bhoi, M. Konishi, R. Moriizumi, V. Pathak, S. Gondi","doi":"10.1109/ASSCC.2008.4708723","DOIUrl":null,"url":null,"abstract":"A small area PHY transceiver that is compatible with CE16G-LR, CE16G-SR, SAS-6G, PCle and XAUl standards is demonstrated. The 4-channel transceiver is realized in a 90 nm CMOS process with each channel occupying a die area of 0.325 mm2. Power dissipation per channel is less than 230 mW from a 1V supply for 6.25 Gb/s, and scales for data rates down to 1.25 Gb/s.","PeriodicalId":143173,"journal":{"name":"2008 IEEE Asian Solid-State Circuits Conference","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2008.4708723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
A small area PHY transceiver that is compatible with CE16G-LR, CE16G-SR, SAS-6G, PCle and XAUl standards is demonstrated. The 4-channel transceiver is realized in a 90 nm CMOS process with each channel occupying a die area of 0.325 mm2. Power dissipation per channel is less than 230 mW from a 1V supply for 6.25 Gb/s, and scales for data rates down to 1.25 Gb/s.