3D simulation and measurements of free space characterization for silicon wafers at K-band

N. Baba, M. Khalid, R. A. Awang
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引用次数: 2

Abstract

This paper describes the 3D simulation and measurements of free space characterization for the complex permittivity of p-type and n-type doped silicon wafers at K-band. The component of this free space measurement system (FSMM) consists of Millitech series GOA Gaussian optics lens antennas, vector network analyzer (VNA) and a high performance workstation. The antennas were modeled and simulated using Computer Simulation Technology (CST) software. The thru, reflect and line (TRL) calibration technique were used to eliminate the effect of undesirable multiple reflections. The simulation and measurement results are presented where good agreements are observed.
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硅晶圆片k波段自由空间特性的三维模拟与测量
本文描述了p型和n型掺杂硅片在k波段复介电常数的三维模拟和自由空间表征的测量。该自由空间测量系统(FSMM)由Millitech系列GOA高斯光学透镜天线、矢量网络分析仪(VNA)和高性能工作站组成。利用计算机仿真技术(CST)软件对天线进行建模和仿真。采用穿透、反射和直线(TRL)校准技术消除了不良的多重反射的影响。给出了仿真和测量结果,两者吻合较好。
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