Angular dependency of SRAM SEU cross sections with Ultra-High Energy Pb beams

Abstract

This paper presents an analysis of the SEU (Single-Event Upset) cross section of a SRAM (Static Random-Access Memory) based radiation monitor under tilted irradiation angles. The monitor was processed in a 180 nm CMOS technology, and was designed as an ASIC (Application-Specified Integrated Circuit). The monitor was tested with a $\mathbf{150}\mathbf{GeV}/\mathbf{u}$ UHE (Ultra-High Energy) Pb ions with a LET of 8.8 $\mathbf{MeV}\cdot \mathbf{cm}^{2}/\mathbf{mg}$, and standard heavy ions from 1.8-60 $\mathbf{MeV}\cdot \mathbf{cm}^{2}/\mathbf{mg}$. The comparison of SEU cross sections between UHE ions and standard heavy ions was discussed, and an analysis on different incident angles using geometry distribution was performed. A 2.5-D TCAD simulation was included to verify the geometry theory, the result showed good agreement.