A compact, 37% fractional bandwidth millimeter-wave phase shifter using a wideband lange coupler for 60-GHz and E-band systems

Navid Hosseinzadeh, J. Buckwalter
{"title":"A compact, 37% fractional bandwidth millimeter-wave phase shifter using a wideband lange coupler for 60-GHz and E-band systems","authors":"Navid Hosseinzadeh, J. Buckwalter","doi":"10.1109/CSICS.2017.8240476","DOIUrl":null,"url":null,"abstract":"A wideband 57.7–84.2 GHz Phase Shifter is presented using a compact Lange coupler to generate in-phase and quadrature signal. The Lange coupler is followed by two balun transformers that provide the IQ vector modulation with differential I and Q signals. The implemented Phase Shifter demonstrates an average 6-dB insertion loss and 5-dB gain variation. The measured average rms phase and gain errors are 7 degrees and 1 dB, respectively. The phase shifter is implemented in GlobalFoundries 45-nm SOI CMOS technology using a trap-rich substrate. The chip area is 385 μm × 285 μm and the Phase Shifter consumes less than 17 mW. To the best of authors knowledge, this is the first phase shifter that covers both 60 GHz band and E-band frequencies with a fractional bandwidth of 37%.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240476","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

A wideband 57.7–84.2 GHz Phase Shifter is presented using a compact Lange coupler to generate in-phase and quadrature signal. The Lange coupler is followed by two balun transformers that provide the IQ vector modulation with differential I and Q signals. The implemented Phase Shifter demonstrates an average 6-dB insertion loss and 5-dB gain variation. The measured average rms phase and gain errors are 7 degrees and 1 dB, respectively. The phase shifter is implemented in GlobalFoundries 45-nm SOI CMOS technology using a trap-rich substrate. The chip area is 385 μm × 285 μm and the Phase Shifter consumes less than 17 mW. To the best of authors knowledge, this is the first phase shifter that covers both 60 GHz band and E-band frequencies with a fractional bandwidth of 37%.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种紧凑的37%分数带宽毫米波移相器,采用宽带耦合器,适用于60 ghz和e波段系统
采用紧凑型兰格耦合器设计了一种宽带57.7-84.2 GHz移相器,可产生同相和正交信号。兰格耦合器之后是两个平衡变压器,提供IQ矢量调制与差分I和Q信号。实现的移相器显示平均6db插入损耗和5db增益变化。测得的平均均方根相位误差和增益误差分别为7度和1 dB。移相器采用GlobalFoundries 45nm SOI CMOS技术,采用富含陷阱的衬底。芯片面积为385 μm × 285 μm,相移器功耗小于17 mW。据作者所知,这是第一个同时覆盖60 GHz频带和e频带频率的移相器,其分数带宽为37%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Electro-thermal characterization of GaN HEMT on Si through selfconsistent energy balance-cellular Monte Carlo device simulations An AC coupled 10 Gb/s LVDS-compatible receiver with latched data biasing in 130 nm SiGe BiCMOS Raytheon high power density GaN technology UHF power conversion with GaN HEMT class-E2 topologies High speed data converters and their applications in optical communication system
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1