Anthony L. Wilson, D. Walz, Younes Lotfi, K. Merkel, M. Von Thun, T. Farris
{"title":"Heavy ion and TID characterization of 3.3 V voltage supervisors","authors":"Anthony L. Wilson, D. Walz, Younes Lotfi, K. Merkel, M. Von Thun, T. Farris","doi":"10.1109/NSREC.2017.8115463","DOIUrl":null,"url":null,"abstract":"We present single event transient (SET) and total ionizing dose (TID) data for the single channel voltage supervisor fabricated in a 0.35μm triple-well, mixed-signal CMOS process.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"402 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2017.8115463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present single event transient (SET) and total ionizing dose (TID) data for the single channel voltage supervisor fabricated in a 0.35μm triple-well, mixed-signal CMOS process.