Pub Date : 2017-07-17DOI: 10.1109/NSREC.2017.8115441
A. Zanchi, M. Cabañas-Holmen, Paul Eaton, Will Burke, R. Brees
A 12-bit 32nm SOI CMOS pipeline ADC clocked at 200 MSps was tested at LBNL with the MilliBeam™ technique and showed no upsets with LET up to 30.9 MeV·cm2/mg (Kr), while 1-sample SETs up to 600 LSB in amplitude were observed with broad-beam exposure at TAMU with 0°, 60° incidence angles (Xe and Au), and LET up to 170 MeVcm2/mg.
使用MilliBeam™技术在LBNL测试了时钟为200 MSps的12位32nm SOI CMOS管道ADC，在LET高达30.9 MeV·cm2/mg (Kr)时没有出现扰动，而在TAMU下，在0°，60°入射角(Xe和Au)的宽光束照射下，1样品的振幅高达600 LSB, LET高达170 MeVcm2/mg。
{"title":"Single-event effects characterization of a 12-bit 200MSps A-to-D converter in 32nm SOI CMOS with MilliBeam™ and broad-beam heavy-ions","authors":"A. Zanchi, M. Cabañas-Holmen, Paul Eaton, Will Burke, R. Brees","doi":"10.1109/NSREC.2017.8115441","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115441","url":null,"abstract":"A 12-bit 32nm SOI CMOS pipeline ADC clocked at 200 MSps was tested at LBNL with the MilliBeam™ technique and showed no upsets with LET up to 30.9 MeV·cm<sup>2</sup>/mg (Kr), while 1-sample SETs up to 600 LSB in amplitude were observed with broad-beam exposure at TAMU with 0°, 60° incidence angles (Xe and Au), and LET up to 170 MeVcm<sup>2</sup>/mg.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131955050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-17DOI: 10.1109/NSREC.2017.8115482
E. Wilcox, M. Campola, Seshagiri Nadendla, Madhu Kadari, Robert A. Gigliuto
Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latchup (SEL) protection circuitry.
{"title":"An improved SEL test of the ADV212 video codec","authors":"E. Wilcox, M. Campola, Seshagiri Nadendla, Madhu Kadari, Robert A. Gigliuto","doi":"10.1109/NSREC.2017.8115482","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115482","url":null,"abstract":"Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latchup (SEL) protection circuitry.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124146972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-17DOI: 10.1109/NSREC.2017.8115467
A. Akturk, J. McGarrity, R. Wilkins, Adam Markowski, Brendan Cusack
Effects of heavy ion, terrestrial neutron and ionizing dose radiation on high voltage silicon carbide (SiC) power MOSFETs are reported along with likely failure modes due to single event effects resulting from heavy ion exposures. The tested SiC power MOSFETs exhibit excellent terrestrial neutron radiation responses with failure in time rates significantly lower than those of comparable silicon power MOSFETs and IGBTs especially near the rated device voltage. The same SiC MOSFETs also exhibit excellent ionizing dose radiation response with threshold voltage shifts significantly lower than those of silicon MOSFETs with similar oxide thicknesses. However the SiC power MOSFETs suffer significantly from heavy ion induced single event effects (SEEs) with sudden failures at high voltages during heavy ion exposure, and post exposure stress induced failures at low and medium voltages.
{"title":"Space and terrestrial radiation response of silicon carbide power MOSFETs","authors":"A. Akturk, J. McGarrity, R. Wilkins, Adam Markowski, Brendan Cusack","doi":"10.1109/NSREC.2017.8115467","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115467","url":null,"abstract":"Effects of heavy ion, terrestrial neutron and ionizing dose radiation on high voltage silicon carbide (SiC) power MOSFETs are reported along with likely failure modes due to single event effects resulting from heavy ion exposures. The tested SiC power MOSFETs exhibit excellent terrestrial neutron radiation responses with failure in time rates significantly lower than those of comparable silicon power MOSFETs and IGBTs especially near the rated device voltage. The same SiC MOSFETs also exhibit excellent ionizing dose radiation response with threshold voltage shifts significantly lower than those of silicon MOSFETs with similar oxide thicknesses. However the SiC power MOSFETs suffer significantly from heavy ion induced single event effects (SEEs) with sudden failures at high voltages during heavy ion exposure, and post exposure stress induced failures at low and medium voltages.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122948064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-17DOI: 10.1109/NSREC.2017.8115445
J. Bird, Michael K. Peters, T. Z. Fullem, Michael J. Tostanoski, T. F. Deaton, Kristianto Hartojo, Roy E. Strayer
Results of neutron induced single event upset testing of devices with embedded error correction codes are described. Specifically, Cypress CY7C1061GE30-10BVXI and CY7C1061GE-10BVXI 16-Mbit Static Random Access Memories (SRAMs), and a memory system, consisting of a Tundra Tsi107 PowerPC Host Bridge interfacing with nine Micron MT48LC32M8A2TG-75ITD 256-Mbit Synchronous Dynamic Random Access Memories (SDRAMs). Four samples of each memory system or device type were irradiated with a 14-MeV neutron source. The units were irradiated using a continual read/write correct loop using several bit patterns. Results for both correctable and uncorrectable errors are presented along with cross section data and soft error rates.
{"title":"Neutron induced single event upset (SEU) testing of commercial memory devices with embedded error correction codes (ECC)","authors":"J. Bird, Michael K. Peters, T. Z. Fullem, Michael J. Tostanoski, T. F. Deaton, Kristianto Hartojo, Roy E. Strayer","doi":"10.1109/NSREC.2017.8115445","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115445","url":null,"abstract":"Results of neutron induced single event upset testing of devices with embedded error correction codes are described. Specifically, Cypress CY7C1061GE30-10BVXI and CY7C1061GE-10BVXI 16-Mbit Static Random Access Memories (SRAMs), and a memory system, consisting of a Tundra Tsi107 PowerPC Host Bridge interfacing with nine Micron MT48LC32M8A2TG-75ITD 256-Mbit Synchronous Dynamic Random Access Memories (SDRAMs). Four samples of each memory system or device type were irradiated with a 14-MeV neutron source. The units were irradiated using a continual read/write correct loop using several bit patterns. Results for both correctable and uncorrectable errors are presented along with cross section data and soft error rates.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130241730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-17DOI: 10.1109/NSREC.2017.8115432
M. O’Bryan, K. Label, E. Wilcox, Dakai Chen, M. Campola, M. Casey, J. Lauenstein, E. Wyrwas, S. Guertin, J. Pellish, M. Berg
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
{"title":"Compendium of current single event effects results from NASA goddard space flight center and NASA electronic parts and packaging program","authors":"M. O’Bryan, K. Label, E. Wilcox, Dakai Chen, M. Campola, M. Casey, J. Lauenstein, E. Wyrwas, S. Guertin, J. Pellish, M. Berg","doi":"10.1109/NSREC.2017.8115432","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115432","url":null,"abstract":"We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126363527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-17DOI: 10.1109/NSREC.2017.8115433
B. Reddell, C. Bailey, P. O'Neill, K. Nguyen, S. Wheeler, R. Gaza, Chirag Patel, J. Cooper, Theodore Kalb, E. Beach, L. Mason
We present the results of Single Event Effects (SEE) testing with high energy protons and with low and high energy heavy ions for electrical components considered for Low Earth Orbit (LEO) and for deep space applications.
{"title":"Compendium of single event effects test results for commercial-off-the-shelf and standard electronics for low earth orbit and deep space applications","authors":"B. Reddell, C. Bailey, P. O'Neill, K. Nguyen, S. Wheeler, R. Gaza, Chirag Patel, J. Cooper, Theodore Kalb, E. Beach, L. Mason","doi":"10.1109/NSREC.2017.8115433","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115433","url":null,"abstract":"We present the results of Single Event Effects (SEE) testing with high energy protons and with low and high energy heavy ions for electrical components considered for Low Earth Orbit (LEO) and for deep space applications.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116873664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-17DOI: 10.1109/NSREC.2017.8115473
J. Lauenstein, M. Casey, E. Wilcox, A. Phan, Hak S. Kim, Alyson D. Topper, R. Ladbury, K. Label
Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-y) configuration, adding to the challenge of inserting these parts into space flight missions.
{"title":"Recent radiation test results for trench power MOSFETs","authors":"J. Lauenstein, M. Casey, E. Wilcox, A. Phan, Hak S. Kim, Alyson D. Topper, R. Ladbury, K. Label","doi":"10.1109/NSREC.2017.8115473","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115473","url":null,"abstract":"Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-y) configuration, adding to the challenge of inserting these parts into space flight missions.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115989319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-17DOI: 10.1109/NSREC.2017.8115431
Alyson D. Topper, M. Campola, Dakai Chen, M. Casey, K. Yau, Donna J. Cochran, K. Label, Raymond L. Ladbury, Tim Mondy, M. O’Bryan, J. Pellish, E. Wilcox, E. Wyrwas, M. Xapsos
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
{"title":"Compendium of current total ionizing dose and displacement damage results from NASA goddard space flight center and NASA electronic parts and packaging program","authors":"Alyson D. Topper, M. Campola, Dakai Chen, M. Casey, K. Yau, Donna J. Cochran, K. Label, Raymond L. Ladbury, Tim Mondy, M. O’Bryan, J. Pellish, E. Wilcox, E. Wyrwas, M. Xapsos","doi":"10.1109/NSREC.2017.8115431","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115431","url":null,"abstract":"Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127312023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-17DOI: 10.1109/NSREC.2017.8115428
F. Irom, G. Allen, Sergeh Vartanian
This paper reports recent single-event latchup results for a variety of microelectronic devices that include an ADC, OpAmp, EEPROM, CPLD, PWM, transceiver, voltage regulator, digital signal processor, step-down converter, buck controller and supervisory circuits. The data were collected to evaluate these devices for possible use in NASA ISS payloads.
{"title":"Single-event latchup measurements on COTS electronic devices for use in ISS payloads","authors":"F. Irom, G. Allen, Sergeh Vartanian","doi":"10.1109/NSREC.2017.8115428","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115428","url":null,"abstract":"This paper reports recent single-event latchup results for a variety of microelectronic devices that include an ADC, OpAmp, EEPROM, CPLD, PWM, transceiver, voltage regulator, digital signal processor, step-down converter, buck controller and supervisory circuits. The data were collected to evaluate these devices for possible use in NASA ISS payloads.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127261960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NSREC.2017.8115430
Amanda N. Bozovich, F. Irom
This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot date codes, manufacturers, circuit design, and test conditions are analyzed herein.
{"title":"Compendium of single event transient (SET) and total ionizing dose (TID) test results for commonly used voltage comparators","authors":"Amanda N. Bozovich, F. Irom","doi":"10.1109/NSREC.2017.8115430","DOIUrl":"https://doi.org/10.1109/NSREC.2017.8115430","url":null,"abstract":"This data compendium reports single event transient (SET) and total ionizing dose (TID) test results for commonly used commercial-off-the-shelf (COTS) and radiation hardened voltage comparators targeted for possible use in space-based missions. Interesting trends in the variability of the radiation performance of these devices due to differences in lot date codes, manufacturers, circuit design, and test conditions are analyzed herein.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122563757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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