Thin-film fully-depleted SOI CMOS technology, devices and circuits for LVLP analog/digital/microwave applications

D. Flandre, D. Vanhoenacker
{"title":"Thin-film fully-depleted SOI CMOS technology, devices and circuits for LVLP analog/digital/microwave applications","authors":"D. Flandre, D. Vanhoenacker","doi":"10.1109/SMICND.1998.732302","DOIUrl":null,"url":null,"abstract":"This paper demonstrates that fully-depleted silicon-on-insulator technology offers unique opportunities in the field of low-voltage, low-power CMOS circuits, allowing for the mixed fabrication and operation under low supply voltage of analog, digital and microwave components with properties significantly superior to those obtained on bulk CMOS.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper demonstrates that fully-depleted silicon-on-insulator technology offers unique opportunities in the field of low-voltage, low-power CMOS circuits, allowing for the mixed fabrication and operation under low supply voltage of analog, digital and microwave components with properties significantly superior to those obtained on bulk CMOS.
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薄膜全耗尽SOI CMOS技术,器件和电路LVLP模拟/数字/微波应用
本文表明,完全耗尽绝缘体上硅技术为低压、低功耗CMOS电路领域提供了独特的机会,允许在低电源电压下混合制造和运行模拟、数字和微波元件,其性能明显优于在体CMOS上获得的性能。
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