Surface-potential-plus approach for next generation CMOS device modeling

Abstract

This paper outlines the advanced Surface-Potential-Plus (SPP) approach for the next generation CMOS device modeling. The main object of this approach is to develop a continuous, completely symmetric and accurate advanced charge-based MOS transistor model from the basic device physics including various physics effects. A unified exact inversion charge relation valid for uniform and retrograde doping cases is first obtained. Various small dimensional effects are elucidated and integrated concisely into this model. Comparison with measured data is finally presented to validate the new model. Importantly, it was also extended to UTB and double-gate MOSFETs.