Study on the spectral response characteristics of GaAs-based blocked-impurity-band detectors

Chuansheng Zhang, B. Wang, Yulu Chen, Liwei Hou, M. Pan, Xiaodong Wang
{"title":"Study on the spectral response characteristics of GaAs-based blocked-impurity-band detectors","authors":"Chuansheng Zhang, B. Wang, Yulu Chen, Liwei Hou, M. Pan, Xiaodong Wang","doi":"10.1109/ICAM.2017.8242148","DOIUrl":null,"url":null,"abstract":"We have developed a GaAs-based Blocked-Impurity-Band (BIB) Detector for the application of Terahertz (THz) security check and astronomical observation. In this work, we have fabricated GaAs:Si and GaAs:Te BIB detectors and analyzed their spectral response characteristics at 3.5K The experimental results of GaAs:Si BIB device demonstrate that the spectral response increases when the bias rises from 0.2 to 2.8V, and the peak wavelength is around 190 μm. The doping elements can form several discrete energy levels in the absorbing layer of GaAs:Si and GaAs:Te BIB detectors, which induce multi-peaks in the spectra. Our results show the potential of GaAs-based BIB detectors as novel, broad-spectrum, and high-performance THz detectors.","PeriodicalId":117801,"journal":{"name":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAM.2017.8242148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

We have developed a GaAs-based Blocked-Impurity-Band (BIB) Detector for the application of Terahertz (THz) security check and astronomical observation. In this work, we have fabricated GaAs:Si and GaAs:Te BIB detectors and analyzed their spectral response characteristics at 3.5K The experimental results of GaAs:Si BIB device demonstrate that the spectral response increases when the bias rises from 0.2 to 2.8V, and the peak wavelength is around 190 μm. The doping elements can form several discrete energy levels in the absorbing layer of GaAs:Si and GaAs:Te BIB detectors, which induce multi-peaks in the spectra. Our results show the potential of GaAs-based BIB detectors as novel, broad-spectrum, and high-performance THz detectors.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
gaas基阻塞杂质带探测器的光谱响应特性研究
我们开发了一种基于gaas的阻塞杂质波段(BIB)探测器,用于太赫兹(THz)安全检查和天文观测。本文制作了GaAs:Si和GaAs:Te BIB探测器,并分析了它们在3.5K时的光谱响应特性。实验结果表明,当偏置从0.2 v增加到2.8V时,光谱响应增加,峰值波长在190 μm左右。掺杂元素可以在GaAs:Si和GaAs:Te BIB探测器的吸收层中形成多个离散能级,从而在光谱中产生多峰。我们的研究结果显示了基于gaas的BIB探测器作为新型、广谱和高性能太赫兹探测器的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
An innovation tool-chain for synthesis and implementation of Xilinx FPGA devices Low offset current sensing circuit based on switched-capacitor A novel high performance SIMD 54-bit multiply array A new optical voltage sensor for linear measurement Temperature distribution and facet coating degradation analysis of 808 nm GaAs-based high-power laser diode bars
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1