The effect of cobalt salicide on SOI CMOS radiation characteristics

Abstract

In this paper we present the total dose radiation characterization of CMOS/SIMOX devices with CoSi/sub 2/ salicide. Various SIMOX devices, such as with or without CoSi/sub 2/, are applied during irradiation in order to define the better radiation hardened process for SOI MOSFETs and ring oscillators. As the experimental results show, the application of Co salicide on SOI CMOS circuits not only reduces the source/drain series resistance, but also improves significantly the SOI radiation hardness properties in terms of threshold voltage shift, junction leakage and CMOS ring oscillator propagation delay.