P. Chow, Jian-Xin Dong, S. Zaytsev, A. Osinsky, B. Hertog
{"title":"Silicon-based rare earth-doped materials and devices grown by MBE","authors":"P. Chow, Jian-Xin Dong, S. Zaytsev, A. Osinsky, B. Hertog","doi":"10.1109/GROUP4.2004.1416734","DOIUrl":null,"url":null,"abstract":"Fabrication of Er doped materials deposited on silicon into LED is demonstrated. A strong infrared luminescence is observed at 1540 nm wavelength region. They also have potential applications for planar optical communication.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Fabrication of Er doped materials deposited on silicon into LED is demonstrated. A strong infrared luminescence is observed at 1540 nm wavelength region. They also have potential applications for planar optical communication.
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