{"title":"Numerical analysis of island-edge effects in SOS MOSFETs","authors":"Q. Lu, Changtong Huang","doi":"10.1109/SOI.1988.95405","DOIUrl":null,"url":null,"abstract":"Degradation of electric characteristics of SOS MOSFETs occurs due to a parasitic transistor in the islands edge. When SOS devices are fabricated with a wet etch process, the island-edge effects are caused by high interface-state densities in the","PeriodicalId":391934,"journal":{"name":"Proceedings. SOS/SOI Technology Workshop","volume":"473 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SOS/SOI Technology Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1988.95405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Degradation of electric characteristics of SOS MOSFETs occurs due to a parasitic transistor in the islands edge. When SOS devices are fabricated with a wet etch process, the island-edge effects are caused by high interface-state densities in the
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