The effect of the doping concentration on nanoscale field effect diode performance

Abstract

The performance of nanoscale Field Effect Diode as a function of doping concentration is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 10¹ to 10⁴ as the doping concentration of source/drain regions increased from 10¹⁶ to 10²¹ cm⁻³. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic application.