M. Asgari, Seyyed Hossein Pishgar Komleh, O. Hashemipour
{"title":"A reliable full-swing low-distortion CMOS bootstrapped sampling switch","authors":"M. Asgari, Seyyed Hossein Pishgar Komleh, O. Hashemipour","doi":"10.1109/ICECS.2011.6122248","DOIUrl":null,"url":null,"abstract":"A reliable low-distortion CMOS bootstrapped sampling switch is presented. Compared to conventional bootstrapped switch, this scheme achieves more reliability because the limits of proposed circuit are VDD+VTHn and −|VTHp|. The variation of equivalent conductance of this CMOS sampling switch through input signal is alleviated by a specific switch's voltage control. The proposed switch is realized with the half number of transistors compared to previously reported scheme which results more simplicity and less area. Simulations using a standard 0.18μm CMOS technology model show about 10dB improvements in both THD and SFDR while using it in a conventional fully-differential sample-and-hold circuit.","PeriodicalId":251525,"journal":{"name":"2011 18th IEEE International Conference on Electronics, Circuits, and Systems","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 18th IEEE International Conference on Electronics, Circuits, and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2011.6122248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A reliable low-distortion CMOS bootstrapped sampling switch is presented. Compared to conventional bootstrapped switch, this scheme achieves more reliability because the limits of proposed circuit are VDD+VTHn and −|VTHp|. The variation of equivalent conductance of this CMOS sampling switch through input signal is alleviated by a specific switch's voltage control. The proposed switch is realized with the half number of transistors compared to previously reported scheme which results more simplicity and less area. Simulations using a standard 0.18μm CMOS technology model show about 10dB improvements in both THD and SFDR while using it in a conventional fully-differential sample-and-hold circuit.