T. Ito, K. Matsuo, H. Itokawa, T. Itani, N. Tarnaoki, Y. Honguh, K. Suguro, T. Yokomori, T. Owada, Y. Goto, Y. Nozaki, H. Murayama, H. Kiyama, T. Kusuda
{"title":"Minimization of pattern dependence by optimized flash lamp annealing","authors":"T. Ito, K. Matsuo, H. Itokawa, T. Itani, N. Tarnaoki, Y. Honguh, K. Suguro, T. Yokomori, T. Owada, Y. Goto, Y. Nozaki, H. Murayama, H. Kiyama, T. Kusuda","doi":"10.1109/IWJT.2005.203882","DOIUrl":null,"url":null,"abstract":"This paper presents the improvement of the flash lamp annealing (FLA) process to achieve the ultra-shallow junction (USJ) requirement for high-performance CMOSFETs. Issues concerning ultra-rapid activation are discussed; namely, crystal damage (residual defect, deformation and crack) and pattern dependence, We report that the FLA process with long pulse duration and cap layers can improve USJ characteristics for various design-scale cells.","PeriodicalId":307038,"journal":{"name":"Extended Abstracts of the Fifth International Workshop on Junction Technology","volume":"239 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Fifth International Workshop on Junction Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2005.203882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper presents the improvement of the flash lamp annealing (FLA) process to achieve the ultra-shallow junction (USJ) requirement for high-performance CMOSFETs. Issues concerning ultra-rapid activation are discussed; namely, crystal damage (residual defect, deformation and crack) and pattern dependence, We report that the FLA process with long pulse duration and cap layers can improve USJ characteristics for various design-scale cells.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
