A 12b-ENOB 61µW noise-shaping SAR ADC with a passive integrator

Wenjuan Guo, Nan Sun
{"title":"A 12b-ENOB 61µW noise-shaping SAR ADC with a passive integrator","authors":"Wenjuan Guo, Nan Sun","doi":"10.1109/ESSCIRC.2016.7598327","DOIUrl":null,"url":null,"abstract":"This paper presents a novel noise shaping SAR architecture that is simple, robust and low power. It is fully passive and only needs minor modification to a conventional SAR ADC. Through a passive integrator, quantization noise, comparator noise and DAC noise are shaped with a noise transfer function of (1 - 0.75z-1). Unlike conventional multi-bit delta-sigma ADCs, both the noise transfer function and the error transfer function of DAC mismatches are immune to process-voltage-temperature variations. A prototype chip is fabricated in a 0.13μm CMOS process. At 1.2V and 2MS/s, the chip consumes 61μW power. SNDR increases by 6dB and the Schreier FoM increases by 3dB with OSR doubled. At an OSR of 8, SNDR is 74dB and the Schreier FoM is 167dB.","PeriodicalId":246471,"journal":{"name":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"51","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2016.7598327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 51

Abstract

This paper presents a novel noise shaping SAR architecture that is simple, robust and low power. It is fully passive and only needs minor modification to a conventional SAR ADC. Through a passive integrator, quantization noise, comparator noise and DAC noise are shaped with a noise transfer function of (1 - 0.75z-1). Unlike conventional multi-bit delta-sigma ADCs, both the noise transfer function and the error transfer function of DAC mismatches are immune to process-voltage-temperature variations. A prototype chip is fabricated in a 0.13μm CMOS process. At 1.2V and 2MS/s, the chip consumes 61μW power. SNDR increases by 6dB and the Schreier FoM increases by 3dB with OSR doubled. At an OSR of 8, SNDR is 74dB and the Schreier FoM is 167dB.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
带无源积分器的12b-ENOB 61µW噪声整形SAR ADC
本文提出了一种简单、鲁棒、低功耗的噪声整形SAR结构。它是完全被动的,只需要对传统的SAR ADC进行微小的修改。通过无源积分器,量化噪声、比较器噪声和DAC噪声以(1 - 0.75z-1)的噪声传递函数形成。与传统的多位δ - σ adc不同,DAC失配的噪声传递函数和误差传递函数都不受工艺电压-温度变化的影响。采用0.13μm CMOS工艺制作了原型芯片。在1.2V和2MS/s下,芯片功耗为61μW。SNDR增加6dB, Schreier FoM增加3dB, OSR增加一倍。在OSR为8时,SNDR为74dB, Schreier FoM为167dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Experimental demonstration of a nanoelectromechanical switch-based logic library including sequential and combinational gates A 1 Tb/s/mm2 inductive-coupling side-by-side chip link Motion-vector estimation and cognitive classification on an image sensor/processor 3D stacked system featuring ThruChip interfaces A 433 MHz 54 µW OOK/FSK/PSK compatible wake-up receiver with 11 µW low-power mode based on injection-locked oscillator A 5-50 Gb/s quarter rate transmitter with a 4-tap multiple-MUX based FFE in 65 nm CMOS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1