Current Collapse Reduction in Al2O3/AlGaN/GaN MOSHEMTs on Si with Sub-bandgap Light Illumination

Abstract

This paper reports the suppression of current collapse in Al2O3/AlGaN/GaN MOSHEMTs on Si with sub-bandgap light illumination. Both the gate pulsed IDS-VGS and double pulsed IDS-VDS characteristics under 405-nm light illumination reveal that the sub-bandgap light illumination can effectively mitigate the electron trapping effect in the gate stack, thereby reducing the current collapse, despite a potential cost of increased off-state leakage current.