R. Bao, Huimei Zhou, Miaomiao Wang, D. Guo, B. Haran, V. Narayanan, R. Divakaruni
{"title":"Extendable and Manufacturable Volume-less Multi-Vt Solution for 7nm Technology Node and Beyond","authors":"R. Bao, Huimei Zhou, Miaomiao Wang, D. Guo, B. Haran, V. Narayanan, R. Divakaruni","doi":"10.1109/IEDM.2018.8614518","DOIUrl":null,"url":null,"abstract":"We demonstrated more than 3 pairs of threshold voltage (Vt) devices by volume-less multiple Vt (multi-Vt) scheme plus dual work function metals (WFM) without performance and reliability degradation on 20nm gate length FinFET CMOS devices. Vt shifts over 200 mV were achieved for both nFET and pFET. The volume-less nature of this multi-Vt scheme relieves replacement metal gate (RMG) challenges and opens the path to offer multi-Vt solution for future highly scaled technologies.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"422 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614518","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We demonstrated more than 3 pairs of threshold voltage (Vt) devices by volume-less multiple Vt (multi-Vt) scheme plus dual work function metals (WFM) without performance and reliability degradation on 20nm gate length FinFET CMOS devices. Vt shifts over 200 mV were achieved for both nFET and pFET. The volume-less nature of this multi-Vt scheme relieves replacement metal gate (RMG) challenges and opens the path to offer multi-Vt solution for future highly scaled technologies.
我们在20nm栅极长度FinFET CMOS器件上，通过无体积多重Vt (multiple Vt)方案和双功功能金属(dual work function metals, WFM)，展示了超过3对阈值电压(Vt)器件的性能和可靠性没有下降。fet和fet均实现了200 mV以上的Vt位移。这种多电压门方案的无体积特性减轻了更换金属门(RMG)的挑战，并为未来高度规模化的技术提供多电压门解决方案开辟了道路。
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
