Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159188

H. Lin, D. Lee, S.-C. Ou, C. Chien, T. Huang

引用次数: 5

Abstract

In this paper, impacts of hole trapping on the negative bias temperature instability (NBTI) degradation and recovery in PMOS devices was investigated. Dual-gate p- and n-channel MOSFETs were fabricated using a standard CMOS twin-well technology.

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空穴捕获对PMOS器件中NBTI降解和恢复的影响

本文研究了空穴捕获对PMOS器件负偏置温度不稳定性(NBTI)降解和恢复的影响。双栅p沟道和n沟道mosfet采用标准CMOS双阱技术制备。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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