{"title":"1.2 kV SiC MOSFET Body Diode Turn-Off in Fast Switching: Channel Conduction, Carrier Plasma and Parasitic Turn-On","authors":"T. Pham, J. Franchi, K. Lee, M. Domeij","doi":"10.1109/ISPSD57135.2023.10147712","DOIUrl":null,"url":null,"abstract":"The paper extends the investigation of the body diode (BD) turn-off process for 1.2 kV SiC MOSFETs [1]. Here, we investigate the devices under high current density (J=675 A/cm2), fast switching (turn-on di/dt up to 6 A/ns) and high temperature conditions (T=175°C). The different aspects of body diode (BD) channel conduction, on-state carrier plasma and parasitic turn-on (PTO) are analysed in detail.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD57135.2023.10147712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The paper extends the investigation of the body diode (BD) turn-off process for 1.2 kV SiC MOSFETs [1]. Here, we investigate the devices under high current density (J=675 A/cm2), fast switching (turn-on di/dt up to 6 A/ns) and high temperature conditions (T=175°C). The different aspects of body diode (BD) channel conduction, on-state carrier plasma and parasitic turn-on (PTO) are analysed in detail.
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