D. Choi, D. Nozu, K. Hasebe, T. Shibata, K. Nakao, M. Izuha, H. Akahori, T. Aoyama, K. Eguchi, K. Hieda, T. Arikado, K. Okumura
{"title":"Cleaning technique of hot-wall batch type Ru CVD equipment by oxygen gas","authors":"D. Choi, D. Nozu, K. Hasebe, T. Shibata, K. Nakao, M. Izuha, H. Akahori, T. Aoyama, K. Eguchi, K. Hieda, T. Arikado, K. Okumura","doi":"10.1109/ISSM.2001.962972","DOIUrl":null,"url":null,"abstract":"The gas cleaning of the hot-wall batch type Ru CVD reactor by oxygen was investigated. The cleaning mechanism is considered as follows. Below 800/spl deg/C, Ru film is oxidized and forms RuO/sub 2/ which is not volatile. But above 800/spl deg/C, RuO/sub 2/ film, which is formed at first, is oxidized again to form RuO/sub 4/. Since RuO/sub 4/ is volatile, it evaporates easily. High temperature, low pressure and high oxygen flow rate were required to obtain fast Ru etching rate. With these optimum cleaning conditions by design of experiments (DOE), 30-nm-thick Ru film was removed completely in 20 minutes. We could accomplish this in situ oxygen gas cleaning effectively in short time by using hot-wall batch type Ru CVD equipment, which has high heating and cooling rate characteristics.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The gas cleaning of the hot-wall batch type Ru CVD reactor by oxygen was investigated. The cleaning mechanism is considered as follows. Below 800/spl deg/C, Ru film is oxidized and forms RuO/sub 2/ which is not volatile. But above 800/spl deg/C, RuO/sub 2/ film, which is formed at first, is oxidized again to form RuO/sub 4/. Since RuO/sub 4/ is volatile, it evaporates easily. High temperature, low pressure and high oxygen flow rate were required to obtain fast Ru etching rate. With these optimum cleaning conditions by design of experiments (DOE), 30-nm-thick Ru film was removed completely in 20 minutes. We could accomplish this in situ oxygen gas cleaning effectively in short time by using hot-wall batch type Ru CVD equipment, which has high heating and cooling rate characteristics.
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