Z. Tokei, V. Vega, G. Murdoch, M. O'Toole, K. Croes, R. Baert, M. V. Veen, C. Adelmann, J. Soulie, J. Boemmels, C. Wilson, S. Park, K. Sankaran, G. Pourtois, J. Sweerts, S. Paolillo, S. Decoster, M. Mao, F. Lazzarino, J. Versluijs, V. Blanco, M. Ercken, E. Kesters, Q. Le, F. Holsteyns, N. Heylen, L. Teugels, K. Devriendt, H. Struyf, P. Morin, N. Jourdan, S. Elshocht, I. Ciofi, A. Gupta, H. Zahedmanesh, K. Vanstreels, M. Na
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引用次数: 14
Abstract
Interconnect options will be introduced and reviewed targeting tight pitch metal layers at the local levels. Examples include hybrid metallization, semi-damascene interconnects as well as potential new conductor materials.
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