{"title":"Effects of Ge profiles on base transit time and base resistance of SiGe HBT's","authors":"J. Song, J. Yuan, F. Schwierz, D. Schipanski","doi":"10.1109/ICECS.1996.584522","DOIUrl":null,"url":null,"abstract":"Effects of the shape of Ge profiles in the base of the SiGe bipolar transistor have been evaluated. Analytical equations of base transit time and base resistance taking into account built-in field from nonuniform base doping and Ge bandgap grading are derived. Comparisons of base transit time and base sheet resistance for different Ge profiles are presented.","PeriodicalId":402369,"journal":{"name":"Proceedings of Third International Conference on Electronics, Circuits, and Systems","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Third International Conference on Electronics, Circuits, and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.1996.584522","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Effects of the shape of Ge profiles in the base of the SiGe bipolar transistor have been evaluated. Analytical equations of base transit time and base resistance taking into account built-in field from nonuniform base doping and Ge bandgap grading are derived. Comparisons of base transit time and base sheet resistance for different Ge profiles are presented.
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