A high power curve tracer for characterizing full operational range of SiC power transistors

Yohei Nakamura, Michihiro Shintani, Takashi Sato, T. Hikihara
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引用次数: 13

Abstract

A curve tracer is proposed for measuring static characteristics of power devices at high voltage and large current range. Using a SiC-MOSFET as a switch for pulse-based measurement, high voltage tolerance and fast switching are simultaneously achieved. The proposed curve tracer facilitates current-voltage measurements for full I-V regions found in practical device operations. The measurement results provided by the proposed method contribute to build device models that can be used to design efficient power converters.
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一种高功率曲线示踪器,用于表征SiC功率晶体管的全工作范围
提出了一种用于高电压大电流范围电力器件静态特性测量的曲线示踪器。使用SiC-MOSFET作为脉冲测量的开关,可以同时实现高电压容限和快速开关。所提出的曲线示踪剂有助于在实际设备操作中发现的全I-V区域的电流-电压测量。该方法提供的测量结果有助于建立可用于设计高效功率转换器的器件模型。
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