Emitter resistance and performance trade-off of submicrometer self-aligned double-polysilicon bipolar devices

T. Yamaguchi, Y. Yu, V. Drobny, A. Witkowski
{"title":"Emitter resistance and performance trade-off of submicrometer self-aligned double-polysilicon bipolar devices","authors":"T. Yamaguchi, Y. Yu, V. Drobny, A. Witkowski","doi":"10.1109/BIPOL.1988.51045","DOIUrl":null,"url":null,"abstract":"Emitter resistance dependences on emitter arsenic implant dose and diffusion temperature, emitter polysilicon film thickness and its two-dimensional effect, and in situ emitter surface cleaning with HCl gas for submicrometer self-aligned double-polysilicon bipolar transistors are described. Emitter resistance is also characterized as a function of emitter area ranging from 0.6*2.4 mu m/sup 2/ to 3.4*10.4 mu m/sup 2/. Cutoff frequency and ECL-gate delay time are compared between the devices with different emitter areas. Based on the experimental results and circuit simulations, and effects of device geometry scaling on emitter resistance and ECL circuit performance are discussed. It is predicted that an ECL-gate delay time of 35 psec with a cutoff frequency of 33 GHz can be expected at an operational current of 400 mu A by achieving the emitter-base, base-collector, and collector-substrate capacitances of 3 fF, 2 fF, and 4 fF, respectively, with a neutral base width of 40 nm and an emitter resistance of 100 Omega .<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Emitter resistance dependences on emitter arsenic implant dose and diffusion temperature, emitter polysilicon film thickness and its two-dimensional effect, and in situ emitter surface cleaning with HCl gas for submicrometer self-aligned double-polysilicon bipolar transistors are described. Emitter resistance is also characterized as a function of emitter area ranging from 0.6*2.4 mu m/sup 2/ to 3.4*10.4 mu m/sup 2/. Cutoff frequency and ECL-gate delay time are compared between the devices with different emitter areas. Based on the experimental results and circuit simulations, and effects of device geometry scaling on emitter resistance and ECL circuit performance are discussed. It is predicted that an ECL-gate delay time of 35 psec with a cutoff frequency of 33 GHz can be expected at an operational current of 400 mu A by achieving the emitter-base, base-collector, and collector-substrate capacitances of 3 fF, 2 fF, and 4 fF, respectively, with a neutral base width of 40 nm and an emitter resistance of 100 Omega .<>
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亚微米自对准双多晶硅双极器件的发射极电阻和性能权衡
描述了亚微米自对准双多晶硅双极晶体管发射极电阻与砷注入剂量和扩散温度的关系、发射极多晶硅薄膜厚度及其二维效应,以及用HCl气体原位清洗发射极表面。发射极电阻也表现为发射极面积的函数,范围从0.6*2.4 μ m/sup 2/到3.4*10.4 μ m/sup 2/。比较了不同发射极面积器件的截止频率和ecl栅极延迟时间。在实验结果和电路仿真的基础上,讨论了器件几何尺度对发射极电阻和ECL电路性能的影响。预计在400 μ a的工作电流下,通过实现发射极-基极、基极-集电极和集电极-衬底电容分别为3ff、2ff和4ff,中性基极宽度为40 nm,发射极电阻为100 Omega .>, ecl -栅极延迟时间为35 psec,截止频率为33 GHz
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