{"title":"Bulk and surface textured MoS/sub 2/ films on GaAs","authors":"G. Jakovidis, I. Jamieson, K. Pavlov, A. Singh","doi":"10.1109/COMMAD.2002.1237223","DOIUrl":null,"url":null,"abstract":"Highly oriented MoS/sub 2/ films on GaAs, suitable for photovoltaic applications, have been obtained using radio frequency (RF)-sputtering. Depositions at 800/spl deg/C exhibit strong [00l] X-ray reflections, indicative of bulk type II texture. Atomic force microscopy (AFM) reveals the orientation of surface platelets for films grown at 800/spl deg/C and 80/spl deg/C, to be consistent with the X-ray data. This study demonstrates that provided the RF-power is kept low (50 W) and the temperature high, well textured type II films up to 500 nm can be deposited, without the need to resort to expensive vapor transport techniques.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Highly oriented MoS/sub 2/ films on GaAs, suitable for photovoltaic applications, have been obtained using radio frequency (RF)-sputtering. Depositions at 800/spl deg/C exhibit strong [00l] X-ray reflections, indicative of bulk type II texture. Atomic force microscopy (AFM) reveals the orientation of surface platelets for films grown at 800/spl deg/C and 80/spl deg/C, to be consistent with the X-ray data. This study demonstrates that provided the RF-power is kept low (50 W) and the temperature high, well textured type II films up to 500 nm can be deposited, without the need to resort to expensive vapor transport techniques.
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