Development of Cu Substrate Preparation Techniques for Graphene Synthesis

Siddarth Laveti, T. Manna, Jodi Grzeskowiak, M. Strohmayer, C. Ventrice
{"title":"Development of Cu Substrate Preparation Techniques for Graphene Synthesis","authors":"Siddarth Laveti, T. Manna, Jodi Grzeskowiak, M. Strohmayer, C. Ventrice","doi":"10.1109/NANOTECH.2018.8653562","DOIUrl":null,"url":null,"abstract":"The most common technique for producing large area graphene films is by chemical vapor deposition on Cu foil substrates. Cu is used as a substrate because the solubility of carbon in Cu at the temperatures at which the chemical vapor deposition is performed is very low. This ensures a surface-mediated growth that is self-limited to a single monolayer of graphene if low precursor pressures are used. Before performing chemical vapor deposition, the surface oxide and carbon that is on the unprocessed foil need to be removed to achieve uniform graphene growth. In addition, the roughness of the surface of the Cu foil should be reduced to help prevent defects from forming in the graphene film during growth. The goal of this research project is to determine the optimal procedure for preparation of the Cu foil substrate to produce high quality graphene. Cu foils with 99.8% and 99.999% purity were used for the experiment. The Cu substrate preparation procedure involves annealing in 1 × 10−5 Torr of H2 at 850 °C to remove the native oxide and to reduce surface roughness. This is followed by annealing in 1 × 10−6 Torr of O2 at 500 °C to remove carbon from the surface of the foil by conversion to CO2 and CO. At this temperature, the solubility of oxygen in Cu is negligible, thus preventing dissolution of oxygen into the bulk. After the oxygen anneal, the foil is annealed in 1 × 10−5 Torr of H2 at 850 °C to remove chemisorbed oxygen from the Cu surface that has formed during the anneal in O2. The anneal durations in this study were varied to determine the optimal technique for graphene synthesis for each foil purity. The samples were characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, and optical microscopy.","PeriodicalId":292669,"journal":{"name":"2018 IEEE Nanotechnology Symposium (ANTS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Nanotechnology Symposium (ANTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANOTECH.2018.8653562","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The most common technique for producing large area graphene films is by chemical vapor deposition on Cu foil substrates. Cu is used as a substrate because the solubility of carbon in Cu at the temperatures at which the chemical vapor deposition is performed is very low. This ensures a surface-mediated growth that is self-limited to a single monolayer of graphene if low precursor pressures are used. Before performing chemical vapor deposition, the surface oxide and carbon that is on the unprocessed foil need to be removed to achieve uniform graphene growth. In addition, the roughness of the surface of the Cu foil should be reduced to help prevent defects from forming in the graphene film during growth. The goal of this research project is to determine the optimal procedure for preparation of the Cu foil substrate to produce high quality graphene. Cu foils with 99.8% and 99.999% purity were used for the experiment. The Cu substrate preparation procedure involves annealing in 1 × 10−5 Torr of H2 at 850 °C to remove the native oxide and to reduce surface roughness. This is followed by annealing in 1 × 10−6 Torr of O2 at 500 °C to remove carbon from the surface of the foil by conversion to CO2 and CO. At this temperature, the solubility of oxygen in Cu is negligible, thus preventing dissolution of oxygen into the bulk. After the oxygen anneal, the foil is annealed in 1 × 10−5 Torr of H2 at 850 °C to remove chemisorbed oxygen from the Cu surface that has formed during the anneal in O2. The anneal durations in this study were varied to determine the optimal technique for graphene synthesis for each foil purity. The samples were characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, and optical microscopy.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
石墨烯合成中Cu衬底制备技术的研究进展
制备大面积石墨烯薄膜的最常用技术是在铜箔衬底上进行化学气相沉积。铜被用作底物,因为在化学气相沉积进行的温度下,碳在铜中的溶解度非常低。这确保了表面介导的生长,如果使用低前驱体压力,则可以自我限制为单层石墨烯。在进行化学气相沉积之前,需要去除未加工箔上的表面氧化物和碳,以实现均匀的石墨烯生长。此外,应该降低铜箔表面的粗糙度,以帮助防止石墨烯薄膜在生长过程中形成缺陷。本研究项目的目标是确定制备铜箔衬底以生产高质量石墨烯的最佳工艺。实验用纯度分别为99.8%和99.999%的铜箔。Cu衬底的制备过程包括在850℃下1 × 10−5 Torr的H2中退火,以去除天然氧化物并降低表面粗糙度。然后在500°C下,在1 × 10−6 Torr的O2中退火,将碳从箔表面转化为CO2和CO。在此温度下,氧在Cu中的溶解度可以忽略不计,从而防止氧溶解到体中。氧退火后,在850℃下以1 × 10−5 Torr的H2进行退火,以去除Cu表面在O2中退火过程中形成的化学吸附氧。在这项研究中,退火时间是不同的,以确定最佳的技术,为每个箔纯度的石墨烯合成。采用x射线光电子能谱、扫描电镜和光学显微镜对样品进行了表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Plasma treatment effect on gate stack electrical properties Double-Gate FDSOI Based SRAM Bitcell Circuit Designs with Different Back-Gate Biasing Configurations Metal Oxide Semiconductor-based gas sensor for Acetone sensing Investigation of plasmonic based nanocomposite thin films for high temperature gas sensing Memory Technology enabling the next Artificial Intelligence revolution
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1