Pub Date : 2018-11-01DOI: 10.1109/NANOTECH.2018.8653560
E. Milosevic, S. Kerdsongpanya, D. Gall
Ru(0001) and Co(0001) films with thickness d ranging from 5 to 300 nm are sputter deposited onto Al2O3(0001) substrates in order to quantify and compare the resistivity size effect. Both metals form epitaxial single crystal layers with their basal planes parallel to the substrate surface and exhibit a root-mean-square roughness < 0.4 nm for Ru and < 0.9 nm for Co. Transport measurements on these layers have negligible resistance contributions from roughness and grain boundary scattering which allows direct quantification of electron surface scattering. The measured resistivity ρ vs d is well described by the classical Fuchs-Sondheimer model, indicating a mean free path for transport within the basal plane of λ = 6.7 ± 0.3 nm for Ru and λ = 19.5 ± 1.0 nm for Co. Bulk Ru is 36% more resistive than Co; in contrast, Ru(0001) layers with d ≤ 25 nm are more conductive than Co(0001) layers, which is attributed to the shorter λ for Ru. The determined λ-values are utilized in combination with the Fuchs-Sondheimer and Mayadas-Shatzkes models to predict and compare the resistance of polycrystalline interconnect lines, assuming a grain boundary reflection coefficient R = 0.4 and accounting for the thinner barrier/adhesion layers available to Ru and Co metallizations. This results in predicted 10 nm half-pitch line resistances for Ru, Co, and Cu of 1.0, 2.2, and 2.1 kΩ/μm, respectively.
{"title":"The Resistivity Size Effect in Epitaxial Ru(0001) and Co(0001) Layers","authors":"E. Milosevic, S. Kerdsongpanya, D. Gall","doi":"10.1109/NANOTECH.2018.8653560","DOIUrl":"https://doi.org/10.1109/NANOTECH.2018.8653560","url":null,"abstract":"Ru(0001) and Co(0001) films with thickness d ranging from 5 to 300 nm are sputter deposited onto Al2O3(0001) substrates in order to quantify and compare the resistivity size effect. Both metals form epitaxial single crystal layers with their basal planes parallel to the substrate surface and exhibit a root-mean-square roughness < 0.4 nm for Ru and < 0.9 nm for Co. Transport measurements on these layers have negligible resistance contributions from roughness and grain boundary scattering which allows direct quantification of electron surface scattering. The measured resistivity ρ vs d is well described by the classical Fuchs-Sondheimer model, indicating a mean free path for transport within the basal plane of λ = 6.7 ± 0.3 nm for Ru and λ = 19.5 ± 1.0 nm for Co. Bulk Ru is 36% more resistive than Co; in contrast, Ru(0001) layers with d ≤ 25 nm are more conductive than Co(0001) layers, which is attributed to the shorter λ for Ru. The determined λ-values are utilized in combination with the Fuchs-Sondheimer and Mayadas-Shatzkes models to predict and compare the resistance of polycrystalline interconnect lines, assuming a grain boundary reflection coefficient R = 0.4 and accounting for the thinner barrier/adhesion layers available to Ru and Co metallizations. This results in predicted 10 nm half-pitch line resistances for Ru, Co, and Cu of 1.0, 2.2, and 2.1 kΩ/μm, respectively.","PeriodicalId":292669,"journal":{"name":"2018 IEEE Nanotechnology Symposium (ANTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129943868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/NANOTECH.2018.8653574
Graeme Housser, H. Efstathiadis
One promising pathway to lower the dollar-per-watt ($/W) cost of CIGS PV is by transitioning the entire device fabrication process to high-throughput roll-to-roll (R2R) or sheet-to-sheet manufacturing. For the full realization of this goal, it is essential that each layer and process in the CIGS stack be optimized for throughput, uniformity, and low-cost operation and maintenance. In this work, Zn(O,S) films are deposited by RF reactive magnetron sputtering for evaluation as an R2R-suitable alternative buffer layer and compared to the industry standard CdS buffer layer deposited by chemical bath. ZnOS films are grown under a range of conditions and characterized by AES, UV-Vis, and XRD. A set of 35 10 cm × 10 cm 3-stage co-evaporated CIGS layers were grown on Mo coated soda lime glass (SLG) and split in half, with one half receiving a sputtered Zn(O,S) buffer layer, and the other half a baseline CdS deposited by chemical bath and a sputtered intrinsic ZnO (i-ZnO) bilayer. The devices were completed with Al:ZnO and Ni/Al grids, with no antireflective coating, then mechanically scribed to isolate 0.43 cm2 area sized cells. Analysis of the completed devices includes IV testing under simulated AM1.5 irradiance. Shunt resistance and series resistance are approximated based on IV curve data. The highest efficiency Zn(O,S) based device measured 10.0% while its control pair measured 12.8% with a CdS/i-ZnO bilayer.
降低CIGS PV每瓦成本($/W)的一个有希望的途径是将整个器件制造过程过渡到高通量卷对卷(R2R)或片对片制造。为了充分实现这一目标，必须优化CIGS堆栈中的每一层和工艺，以实现吞吐量、均匀性和低成本的操作和维护。本文采用射频反应磁控溅射法制备Zn(O,S)薄膜，并与工业标准的化学镀液法制备的CdS缓冲层进行了比较。采用AES、UV-Vis和XRD对zno薄膜进行了表征。在Mo涂层的钠石灰玻璃(SLG)上生长了一组35个10 cm × 10 cm的三段式共蒸发CIGS层，并将其分成两半，其中一半是溅射Zn(O,S)缓冲层，另一半是化学浴沉积的基准CdS和溅射本质ZnO (i-ZnO)双分子层。该器件由Al:ZnO和Ni/Al栅格完成，没有抗反射涂层，然后机械刻蚀以隔离0.43 cm2面积大小的电池。完成的器件分析包括模拟AM1.5辐照度下的IV测试。并联电阻和串联电阻根据IV曲线数据进行近似。在CdS/i-ZnO双分子层中，Zn(O,S)基器件的最高效率为10.0%，而其控制对的最高效率为12.8%。
{"title":"Reactively Sputtered Zn(O,S) Buffer Layer Suitable for Roll-to-Roll Fabrication of Cu(In,Ga)Se2 Devices","authors":"Graeme Housser, H. Efstathiadis","doi":"10.1109/NANOTECH.2018.8653574","DOIUrl":"https://doi.org/10.1109/NANOTECH.2018.8653574","url":null,"abstract":"One promising pathway to lower the dollar-per-watt ($/W) cost of CIGS PV is by transitioning the entire device fabrication process to high-throughput roll-to-roll (R2R) or sheet-to-sheet manufacturing. For the full realization of this goal, it is essential that each layer and process in the CIGS stack be optimized for throughput, uniformity, and low-cost operation and maintenance. In this work, Zn(O,S) films are deposited by RF reactive magnetron sputtering for evaluation as an R2R-suitable alternative buffer layer and compared to the industry standard CdS buffer layer deposited by chemical bath. ZnOS films are grown under a range of conditions and characterized by AES, UV-Vis, and XRD. A set of 35 10 cm × 10 cm 3-stage co-evaporated CIGS layers were grown on Mo coated soda lime glass (SLG) and split in half, with one half receiving a sputtered Zn(O,S) buffer layer, and the other half a baseline CdS deposited by chemical bath and a sputtered intrinsic ZnO (i-ZnO) bilayer. The devices were completed with Al:ZnO and Ni/Al grids, with no antireflective coating, then mechanically scribed to isolate 0.43 cm2 area sized cells. Analysis of the completed devices includes IV testing under simulated AM1.5 irradiance. Shunt resistance and series resistance are approximated based on IV curve data. The highest efficiency Zn(O,S) based device measured 10.0% while its control pair measured 12.8% with a CdS/i-ZnO bilayer.","PeriodicalId":292669,"journal":{"name":"2018 IEEE Nanotechnology Symposium (ANTS)","volume":"462 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117016710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/NANOTECH.2018.8653572
Viktoria Koscinski, Chen-Fu Chiang
Systematic dimensionality reduction allows for the optimization of quantum search and transport problems on particular graphs. In the past, the Lanczos Algorithm has been used to perform systematic dimensionality reduction on matrices of graphs including the Complete Graph (CG), the CG with symmetry broken, and Complete Multipartite Graphs (CMPGs), including the Complete Bipartite Graph (CBG). We focus on expanding the scope of these reductions to the CBG with symmetry broken in order to allow the optimization of Quantum Walks on this type of graph.We show that similarly to the CG, the Lanczos Algorithm can be expanded to the CBG with broken symmetry, which has k random edges removed with the constraints that no more than one edge per node is removed and that no edges that connect to the solution node are removed. Unlike the CG with broken edges, which, after reduction, has 3 types of nodes and a resulting 3×3 matrix, the CBG with broken edges reduces to a graph with 5 types of nodes, resulting in a reduction from an NxN matrix to a 5×5 matrix. From these results, it may be further explored whether or not the more general CMPG reduction may also be expanded by breaking the graph’s symmetry, and if so, how the dimensions of the reduced matrices will be affected as the number of partitions grows.
{"title":"Dimensionality Reduction of the Complete Bipartite Graph with K Edges Removed for Quantum Walks","authors":"Viktoria Koscinski, Chen-Fu Chiang","doi":"10.1109/NANOTECH.2018.8653572","DOIUrl":"https://doi.org/10.1109/NANOTECH.2018.8653572","url":null,"abstract":"Systematic dimensionality reduction allows for the optimization of quantum search and transport problems on particular graphs. In the past, the Lanczos Algorithm has been used to perform systematic dimensionality reduction on matrices of graphs including the Complete Graph (CG), the CG with symmetry broken, and Complete Multipartite Graphs (CMPGs), including the Complete Bipartite Graph (CBG). We focus on expanding the scope of these reductions to the CBG with symmetry broken in order to allow the optimization of Quantum Walks on this type of graph.We show that similarly to the CG, the Lanczos Algorithm can be expanded to the CBG with broken symmetry, which has k random edges removed with the constraints that no more than one edge per node is removed and that no edges that connect to the solution node are removed. Unlike the CG with broken edges, which, after reduction, has 3 types of nodes and a resulting 3×3 matrix, the CBG with broken edges reduces to a graph with 5 types of nodes, resulting in a reduction from an NxN matrix to a 5×5 matrix. From these results, it may be further explored whether or not the more general CMPG reduction may also be expanded by breaking the graph’s symmetry, and if so, how the dimensions of the reduced matrices will be affected as the number of partitions grows.","PeriodicalId":292669,"journal":{"name":"2018 IEEE Nanotechnology Symposium (ANTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129373586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/NANOTECH.2018.8653563
L. Banu, R. Potyrailo, M. Carpenter
Plasmonic based thin metal oxide films embedded with Au nanoparticles (AuNPs) have been employed as sensing materials for detection of H2 and CO2 gases at high temperature and an oxygen free environment. Applications of this sensing technology include solid oxide fuel cells (SOFCs) as well as high temperature harsh environments which might be oxidizing or reducing in nature. In situ detection of H2, CO2, CO, CH4, and water vapor at the inlet stream of solid oxide fuel cell is important for its efficient operation. Existing sensors have several prominent limitations such as poor dynamic range, poor stability, slow response time, and inability to accurately detect one or several gases of interest in the presence of numerous interferences and contaminants. Materials with good sensitivity, selectivity and thermal stability for rapid reliable detection and monitoring of gases is still a necessity. In this work, the localized surface plasmon response (LSPR) of AuNPs embedded in metal oxide is investigated for detection of H2 and CO2. Firstly, CeO2 supported AuNP sample is employed for percent level detection of H2 and CO2. The study is extended to H2 sensing in a CO2 / N2 carrier gas as well as CO2 sensing in a H2 / N2 carrier gas. Additionally, H2 pretreatment and increased temperature showed a signature response for CO2 on Au-CeO2 film. These sensors should complement existing instruments in situations when multi-point or distributed measurements are needed and as such sensors with demonstrated stability, selectivity and sensitivity will ensure a series of parallel measurements for enhanced system control.
{"title":"Investigation of plasmonic based nanocomposite thin films for high temperature gas sensing","authors":"L. Banu, R. Potyrailo, M. Carpenter","doi":"10.1109/NANOTECH.2018.8653563","DOIUrl":"https://doi.org/10.1109/NANOTECH.2018.8653563","url":null,"abstract":"Plasmonic based thin metal oxide films embedded with Au nanoparticles (AuNPs) have been employed as sensing materials for detection of H<inf>2</inf> and CO<inf>2</inf> gases at high temperature and an oxygen free environment. Applications of this sensing technology include solid oxide fuel cells (SOFCs) as well as high temperature harsh environments which might be oxidizing or reducing in nature. In situ detection of H<inf>2</inf>, CO<inf>2</inf>, CO, CH<inf>4</inf>, and water vapor at the inlet stream of solid oxide fuel cell is important for its efficient operation. Existing sensors have several prominent limitations such as poor dynamic range, poor stability, slow response time, and inability to accurately detect one or several gases of interest in the presence of numerous interferences and contaminants. Materials with good sensitivity, selectivity and thermal stability for rapid reliable detection and monitoring of gases is still a necessity. In this work, the localized surface plasmon response (LSPR) of AuNPs embedded in metal oxide is investigated for detection of H<inf>2</inf> and CO<inf>2</inf>. Firstly, CeO<inf>2</inf> supported AuNP sample is employed for percent level detection of H<inf>2</inf> and CO<inf>2</inf>. The study is extended to H<inf>2</inf> sensing in a CO<inf>2</inf> / N<inf>2</inf> carrier gas as well as CO<inf>2</inf> sensing in a H<inf>2</inf> / N<inf>2</inf> carrier gas. Additionally, H<inf>2</inf> pretreatment and increased temperature showed a signature response for CO<inf>2</inf> on Au-CeO<inf>2</inf> film. These sensors should complement existing instruments in situations when multi-point or distributed measurements are needed and as such sensors with demonstrated stability, selectivity and sensitivity will ensure a series of parallel measurements for enhanced system control.","PeriodicalId":292669,"journal":{"name":"2018 IEEE Nanotechnology Symposium (ANTS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115780482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/NANOTECH.2018.8653573
Awani Khodkumbhe, Mohd. Nahid, V. Saini, A. Agarwal, R. Prajesh
Acetone constitutes 58% of the volatile organic compounds found in human breath. Acetone in breath is proven to be a biomarker for type I diabetes. Portable and sensitive metal oxide semiconductor-based gas sensor with Tungsten Oxide (WO3) thin film as the sensing layer has been used to measure the concentration of Acetone in breath. Acetone gas being a reducing gas decreases the resistance of thin film when it comes in contact of the sensor. The gas sensor is fabricated, characterized and tested for various concentrations of Acetone gas. A linear calibration curve is obtained on the log scale for predicting any concentration in the novel range of 10 ppm to 300 ppm at 300 °C in the sensor fabricated using RF Magnetron sputtering method. The gas sensor is portable and easy to handle with the chip size of 5mm × 5mm and thin film thickness of 100 nm. The efficiency is optimized by operating it at temperature 300 °C with minimum response time and recovery time
{"title":"Metal Oxide Semiconductor-based gas sensor for Acetone sensing","authors":"Awani Khodkumbhe, Mohd. Nahid, V. Saini, A. Agarwal, R. Prajesh","doi":"10.1109/NANOTECH.2018.8653573","DOIUrl":"https://doi.org/10.1109/NANOTECH.2018.8653573","url":null,"abstract":"Acetone constitutes 58% of the volatile organic compounds found in human breath. Acetone in breath is proven to be a biomarker for type I diabetes. Portable and sensitive metal oxide semiconductor-based gas sensor with Tungsten Oxide (WO3) thin film as the sensing layer has been used to measure the concentration of Acetone in breath. Acetone gas being a reducing gas decreases the resistance of thin film when it comes in contact of the sensor. The gas sensor is fabricated, characterized and tested for various concentrations of Acetone gas. A linear calibration curve is obtained on the log scale for predicting any concentration in the novel range of 10 ppm to 300 ppm at 300 °C in the sensor fabricated using RF Magnetron sputtering method. The gas sensor is portable and easy to handle with the chip size of 5mm × 5mm and thin film thickness of 100 nm. The efficiency is optimized by operating it at temperature 300 °C with minimum response time and recovery time","PeriodicalId":292669,"journal":{"name":"2018 IEEE Nanotechnology Symposium (ANTS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115710983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/nanotech.2018.8653567
C. Netzband, K. Dunn
Ceria nanoparticles are used in chemical mechanical planarization (CMP) slurry for their selective removal of oxides over nitrides. This removal depends on the ratio of Ce3+/Ce4+ ions on the surface of the particles. As this ratio increases, so does the interaction with the oxide surface, resulting in an increased removal rate.Most studies to date focus on how synthesis [1,2] and particle size [3–5] affect these ratios but ignore the changes that could arise when using the particles in an aqueous slurry environment.In this study, X-ray photoelectron spectroscopy (XPS) was used to measure the surface Ce3+ concentration as a function of pH and oxidizing agent concentration [Figures 1&2] in the slurry. The effects of these properties were examined using three different sources for the ceria nanoparticles [Table 1].
{"title":"XPS Investigation of the Oxidation State of Different Ceria Powders for CMP Slurry","authors":"C. Netzband, K. Dunn","doi":"10.1109/nanotech.2018.8653567","DOIUrl":"https://doi.org/10.1109/nanotech.2018.8653567","url":null,"abstract":"Ceria nanoparticles are used in chemical mechanical planarization (CMP) slurry for their selective removal of oxides over nitrides. This removal depends on the ratio of Ce3+/Ce4+ ions on the surface of the particles. As this ratio increases, so does the interaction with the oxide surface, resulting in an increased removal rate.Most studies to date focus on how synthesis [1,2] and particle size [3–5] affect these ratios but ignore the changes that could arise when using the particles in an aqueous slurry environment.In this study, X-ray photoelectron spectroscopy (XPS) was used to measure the surface Ce3+ concentration as a function of pH and oxidizing agent concentration [Figures 1&2] in the slurry. The effects of these properties were examined using three different sources for the ceria nanoparticles [Table 1].","PeriodicalId":292669,"journal":{"name":"2018 IEEE Nanotechnology Symposium (ANTS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117070158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/NANOTECH.2018.8653569
Ranjana Godse, A. McPadden, Vipinchandra Patel, Jung Yoon
Artificial intelligence (AI), specifically Deep Learning (DL) techniques are used for real-time analytics, fraud detection, autonomous driving, and speech recognition etc. These power and data hungry DL applications on cloud and at edge has increased Deep Neural Network (DNN) complexity. Multi-tiered Compute, Memory and Storage arrangements can help push AI applications by providing faster access to high volume of data and optimizing cost. AI memory needs are quite different from traditional workloads, requiring faster access to data. DRAM manufacturers struggle with challenges like density growth, cost and bit errors. High Bandwidth Memory (HBM) and GDDR help achieve almost real time access to the memory. Each of these memories have range of system trade-offs such as density, power efficiency and bandwidth. Unlike traditional memory, Persistent memory like MRAM, Phase change memory (PCM), Resistive RAM (ReRAM), Carbon Nanotube RAM (NRAM) etc. provide non-volatility. Persistent memory has a potential to reduce the latency and cost gap between DRAM and Storage. Persistent Memory is a promising technology for driving AI but face challenges of cost, scaling and reliability. Bigger the training data set, better the inference drawn by DNN. This comes with a huge storage demand. With increase in layer count of 3D NAND and innovations in circuit design and process technology, flash enables multi-bit TLC and QLC densities. PCIe bus with SSD provides low latency and high throughput, making flash the most optimal solution for AI storage. High aspect ratio channel etch, staircase contacts, defect control etc. are some of the challenges with upcoming flash generations.
{"title":"Memory Technology enabling the next Artificial Intelligence revolution","authors":"Ranjana Godse, A. McPadden, Vipinchandra Patel, Jung Yoon","doi":"10.1109/NANOTECH.2018.8653569","DOIUrl":"https://doi.org/10.1109/NANOTECH.2018.8653569","url":null,"abstract":"Artificial intelligence (AI), specifically Deep Learning (DL) techniques are used for real-time analytics, fraud detection, autonomous driving, and speech recognition etc. These power and data hungry DL applications on cloud and at edge has increased Deep Neural Network (DNN) complexity. Multi-tiered Compute, Memory and Storage arrangements can help push AI applications by providing faster access to high volume of data and optimizing cost. AI memory needs are quite different from traditional workloads, requiring faster access to data. DRAM manufacturers struggle with challenges like density growth, cost and bit errors. High Bandwidth Memory (HBM) and GDDR help achieve almost real time access to the memory. Each of these memories have range of system trade-offs such as density, power efficiency and bandwidth. Unlike traditional memory, Persistent memory like MRAM, Phase change memory (PCM), Resistive RAM (ReRAM), Carbon Nanotube RAM (NRAM) etc. provide non-volatility. Persistent memory has a potential to reduce the latency and cost gap between DRAM and Storage. Persistent Memory is a promising technology for driving AI but face challenges of cost, scaling and reliability. Bigger the training data set, better the inference drawn by DNN. This comes with a huge storage demand. With increase in layer count of 3D NAND and innovations in circuit design and process technology, flash enables multi-bit TLC and QLC densities. PCIe bus with SSD provides low latency and high throughput, making flash the most optimal solution for AI storage. High aspect ratio channel etch, staircase contacts, defect control etc. are some of the challenges with upcoming flash generations.","PeriodicalId":292669,"journal":{"name":"2018 IEEE Nanotechnology Symposium (ANTS)","volume":"519 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116255109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/NANOTECH.2018.8653568
Aaron Gregory, Chen-Fu Chiang
We utilize dimensionality reduction to model and simulate continuous time quantum walks on a multi-partite graph, verifying that they produce a quadratic speedup over classical walks. We also discuss the applicability of dimensionality reduction as a modelling tool to experiments run on quantum hardware.
{"title":"Simulation of Quantum Walks via Hamiltonian Reduction","authors":"Aaron Gregory, Chen-Fu Chiang","doi":"10.1109/NANOTECH.2018.8653568","DOIUrl":"https://doi.org/10.1109/NANOTECH.2018.8653568","url":null,"abstract":"We utilize dimensionality reduction to model and simulate continuous time quantum walks on a multi-partite graph, verifying that they produce a quadratic speedup over classical walks. We also discuss the applicability of dimensionality reduction as a modelling tool to experiments run on quantum hardware.","PeriodicalId":292669,"journal":{"name":"2018 IEEE Nanotechnology Symposium (ANTS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122571232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-11-01DOI: 10.1109/nanotech.2018.8653571
Jesse Claypoole, Mark Altwerger, Spencer Flottman, H. Efstathiadis
Si doped Zinc oxide (Si-ZnO) thin films were deposited on glass substrates by RF magnetron co-sputtering Phosphorus doped Si and ZnO. The effect of different n-Si/ZnO wattage ratios, pressures, and oxygen percentage in Ar atmosphere on the optical and electrical properties of the films was investigated. A comparison between the Si-ZnO and ZnO thin film deposited under the same conditions was made in order to determine the tradeoff between the resistivity and optical transparency as the wattage ratio of Si/ZnO changed. The best N-Si doped ZnO film achieved a minimum resistivity of 3.06 × 10−3 ohm cm using 2 mT in an argon atmosphere while maintaining greater than 80% transmission in the visible and near infrared spectrum.
{"title":"Characterization of N type Si doped ZnO and ZnO thin films deposited by RF magnetron sputtering","authors":"Jesse Claypoole, Mark Altwerger, Spencer Flottman, H. Efstathiadis","doi":"10.1109/nanotech.2018.8653571","DOIUrl":"https://doi.org/10.1109/nanotech.2018.8653571","url":null,"abstract":"Si doped Zinc oxide (Si-ZnO) thin films were deposited on glass substrates by RF magnetron co-sputtering Phosphorus doped Si and ZnO. The effect of different n-Si/ZnO wattage ratios, pressures, and oxygen percentage in Ar atmosphere on the optical and electrical properties of the films was investigated. A comparison between the Si-ZnO and ZnO thin film deposited under the same conditions was made in order to determine the tradeoff between the resistivity and optical transparency as the wattage ratio of Si/ZnO changed. The best N-Si doped ZnO film achieved a minimum resistivity of 3.06 × 10−3 ohm cm using 2 mT in an argon atmosphere while maintaining greater than 80% transmission in the visible and near infrared spectrum.","PeriodicalId":292669,"journal":{"name":"2018 IEEE Nanotechnology Symposium (ANTS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120950596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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