Design of GaN-based balanced cascode cells for wide-band distributed power amplifier

A. Martin, T. Reveyrand, M. Campovecchio, R. Aubry, S. Piotrowicz, D. Floriot, R. Quéré
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引用次数: 10

Abstract

This paper reports on the design of a cascode GaN HEMT cell dedicated to 4-18 GHz flip-chip distributed power amplifier. The active device is a 8x50 mum AlGaN/GaN HEMT grown on SiC substrate. The GaN-based die which integrates the active cascode cell and its matching elements is flip-chipped via electrical bumps onto an AIN substrate. The matching elements of the balanced cascode cell are composed of series capacitances on the gate of both transistors with additional resistances to insure stability and bias path. The series capacitor on the gate of the 1st transistor is added for the distributed amplifier optimisation while the series capacitor on the gate of the 2 nd transistor is dedicated
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宽带分布式功率放大器用氮化镓平衡级联电池的设计
本文报道了一种用于4- 18ghz倒装分布式功率放大器的级联GaN HEMT单元的设计。有源器件是生长在SiC衬底上的8x50 mum AlGaN/GaN HEMT。集成有源级联编码单元及其匹配元件的氮化镓基芯片通过电颠簸倒装到氮化镓基板上。平衡级联电池的匹配元件由两个晶体管栅极上的串联电容和附加电阻组成,以确保稳定性和偏置路径。第1晶体管栅极上的串联电容器被添加用于分布式放大器优化,而第2晶体管栅极上的串联电容器是专用的
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Outphasing power amplifier design investigations for 2.5G and 3G standards Wideband millimeter wave pin diode spdt switch using ibm 0.13µm sige technology An active mixer topology for high linearity and high frequency applications New electrothermal system level model for RF power amplifier AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication
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