H. Ishida, Y. Hirose, T. Murata, A. Kanda, Y. Ikeda, T. Matsuno, K. Inoue, Y. Uemoto, T. Tanaka, T. Egawa, D. Ueda
{"title":"A high power Tx/Rx switch IC using AlGaN/GaN HFETs","authors":"H. Ishida, Y. Hirose, T. Murata, A. Kanda, Y. Ikeda, T. Matsuno, K. Inoue, Y. Uemoto, T. Tanaka, T. Egawa, D. Ueda","doi":"10.1109/IEDM.2003.1269350","DOIUrl":null,"url":null,"abstract":"An extremely high power Tx/Rx switch IC based on AlGaN/GaN HFETs has been developed for the first time. A low on-state resistance realized by Si doping techniques and a low off-state capacitance by using an Al/sub 2/O/sub 3/ substrate led to excellent performance of 0.26 dB insertion loss and 27 dB isolation with the power handling capability of 43 W at 1 GHz.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"50 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
An extremely high power Tx/Rx switch IC based on AlGaN/GaN HFETs has been developed for the first time. A low on-state resistance realized by Si doping techniques and a low off-state capacitance by using an Al/sub 2/O/sub 3/ substrate led to excellent performance of 0.26 dB insertion loss and 27 dB isolation with the power handling capability of 43 W at 1 GHz.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
