Design Space Exploration of a 512KB STT-Assisted SOT MRAM Cache

Adrian G. Caburnay, Jonathan Gabriel S.A. Reyes, A. Ballesil-Alvarez, M. T. D. Leon, J. Hizon, M. Rosales, Christopher G. Santos, Maria Patricia Rouelli G. Sabino
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Abstract

The effects of varying the Spin Transfer Torque (STT) and Spin Orbit Torque (SOT) currents in a 512KB STT-Assisted SOT MRAM cache to its total cache area, write latency and energy consumption were investigated. The lowest cache write latencies can be achieved when the transistor widths are approximately equal. Out of all transistor sizings, the lowest write latency is 2.95ns with a corresponding cache area of 2.2756mm2. Meanwhile the lowest energy consumption is 441.777 pJ which is when the transistor widths are at their minimum.
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512KB stt辅助SOT MRAM高速缓存的设计空间探索
研究了512KB STT辅助SOT MRAM高速缓存中不同的自旋传递扭矩(STT)和自旋轨道扭矩(SOT)电流对总缓存面积、写入延迟和能耗的影响。当晶体管宽度大致相等时,可以实现最低的缓存写入延迟。在所有晶体管尺寸中,最低的写入延迟为2.95ns,相应的缓存面积为2.2756mm2。同时,最低的能量消耗为441.777 pJ,这是晶体管宽度最小的时候。
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