A Design of 5.8GHz Tunable Band Noise Cancelling CMOS LNA for DSRC Communications

Dong Won Lee, Kangyoon Lee
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Abstract

This article presents about 5.8GHz noise cancelling CMOS LNA for DSRC communication. The LNA is designed with differential output with balun architecture and resistive-feedback noise cancelling technique. Tunable load capacitor bank achieves wideband input matching and gain selection. The LNA is implemented in 130nm CMOS technology and achieves a simulated gain of 24.2dB and PldB of -13.46dB and noise figure(NF) of 2.74dB at center frequency. The power consumption is 10.51mW at 1.2V power supply. The chip area is 509×559µm2
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用于DSRC通信的5.8GHz可调谐频段降噪CMOS LNA设计
本文介绍了用于DSRC通信的5.8GHz降噪CMOS LNA。LNA设计为差分输出,采用平衡结构和电阻反馈降噪技术。可调谐负载电容器组实现宽带输入匹配和增益选择。该LNA采用130nm CMOS技术实现,在中心频率处仿真增益24.2dB, PldB为-13.46dB,噪声系数(NF)为2.74dB。1.2V供电时的功耗为10.51mW。芯片面积为509×559µm2
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