RF performance of the novel planar-type body-connected FinFET fabricated by isolation-last and self-alignment process

Abstract

In this paper, we for the first time demonstrate a detailed radio frequency (RF) simulation study of the novel planar-type body-connected FinFET with 45 nm gate length, for which the DC behavior exhibits better ION-IOFF current ratio and improved transconductance performance when compared with a planar-type FinFET. The RF characteristics are carried out as functions of gate voltage (VG) and drain current (ID) as well as the overdrive voltage (VOV). In addition, the total gate capacitance (Cgg) is also reported.