N. Rodriguez, C. Navarro, F. Gámiz, F. Andrieu, O. Faynot, S. Cristoloveanu
{"title":"Experimental demonstration of A2RAM memory cell on SOI","authors":"N. Rodriguez, C. Navarro, F. Gámiz, F. Andrieu, O. Faynot, S. Cristoloveanu","doi":"10.1109/SOI.2012.6404392","DOIUrl":null,"url":null,"abstract":"The A2RAM memory cell has been fabricated and its operation demonstrated experimentally for the first time. The retrograde P-N channel doping allows the separation of electrons and holes in very thin films. We have documented attractive performance in terms of current margin, retention time, variability and cell disturbance immunity without any additional source/drain implantation optimization compared to logic transistor integration.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The A2RAM memory cell has been fabricated and its operation demonstrated experimentally for the first time. The retrograde P-N channel doping allows the separation of electrons and holes in very thin films. We have documented attractive performance in terms of current margin, retention time, variability and cell disturbance immunity without any additional source/drain implantation optimization compared to logic transistor integration.
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