{"title":"A new method for the localisation of metallization defects using cathodoluminescence imaging","authors":"X. Liu, J. Phang, D. Chan, W. Chim","doi":"10.1109/IPFA.1997.638343","DOIUrl":null,"url":null,"abstract":"We report a new concept for the localisation of metallization defects by using cathodoluminescence (CL) imaging. The CL image contrast, which is due to the difference in light reflection characteristics of the contact metal and substrate materials, is used for the localisation of metallization defects. This method is applicable to devices with a luminescent passivation layer and a non-luminescent substrate. Experimental study of a silicon device with a passivation layer of Si/sub 3/N/sub 4//a-SiO/sub 2/ is reported.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.1997.638343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We report a new concept for the localisation of metallization defects by using cathodoluminescence (CL) imaging. The CL image contrast, which is due to the difference in light reflection characteristics of the contact metal and substrate materials, is used for the localisation of metallization defects. This method is applicable to devices with a luminescent passivation layer and a non-luminescent substrate. Experimental study of a silicon device with a passivation layer of Si/sub 3/N/sub 4//a-SiO/sub 2/ is reported.
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