Reverse Engineering in the Semiconductor Industry

R. Torrance, D. James
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引用次数: 18

Abstract

The intent of this paper is to give an overview of the place of reverse engineering (RE) in the semiconductor industry, and the techniques used to obtain information from semiconductor products. The continuous drive of Moore's law to increase the integration level of silicon chips has presented major challenges to the reverse engineer, obsolescing simple teardowns and demanding the adopted of new and more sophisticated technology to analyse chips. This trend is continuing; the 2006 update of the International Technology Roadmap for Semiconductors is predicting the shrinkage of transistor gates from the current 65-nm generation to 16 nm at the turn of the decade, and the usage of over 1.5 billion transistors in high-volume microprocessor chips. The paper covers product teardowns, and discusses the techniques used for system-level analysis, both hardware and software; circuit extraction, taking the chip down to the transistor level and working back up through the interconnects to create schematics; and process analysis, looking at how a chip is made, and what it is made of. Examples are also given of each type of RE.
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半导体工业中的逆向工程
本文的目的是概述逆向工程(RE)在半导体工业中的地位,以及用于从半导体产品中获取信息的技术。摩尔定律不断推动硅芯片集成水平的提高,这对逆向工程提出了重大挑战,简单的拆解已经过时,要求采用新的、更复杂的技术来分析芯片。这一趋势仍在继续;2006年更新的《国际半导体技术路线图》预测,在本世纪初,晶体管栅极将从目前的65纳米缩小到16纳米,而在大批量微处理器芯片中,晶体管的使用量将超过15亿个。本文涵盖了产品拆解,并讨论了用于系统级分析的技术,包括硬件和软件;电路提取,将芯片降至晶体管级别,并通过互连向上工作以创建原理图;过程分析,看看芯片是如何制造的,它是由什么制成的。还给出了每种RE类型的示例。
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