{"title":"Multi-megahertz pulse width modulation converters with improved 1 /spl mu/m p-channel metal oxide semiconductor transistors","authors":"T. Fowler, R. Kollman, T. Efland, D. Skelton","doi":"10.1109/ISPSD.1996.509477","DOIUrl":null,"url":null,"abstract":"Pulse width modulation (PWM) techniques have been limited to 1 to 2 MHz by the switching speeds of currently available power switches. This limitation has been overcome by high speed (<2 nanosecond) switching with improved 1 /spl mu/m PMOS transistors. These devices have been incorporated in a 5 MHz, PWM buck power stage that has demonstrated good efficiency (>85%) and very high power density (500 W/in/sup 3/ versus state-of-the-art 100 W/in/sup 3/).","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Pulse width modulation (PWM) techniques have been limited to 1 to 2 MHz by the switching speeds of currently available power switches. This limitation has been overcome by high speed (<2 nanosecond) switching with improved 1 /spl mu/m PMOS transistors. These devices have been incorporated in a 5 MHz, PWM buck power stage that has demonstrated good efficiency (>85%) and very high power density (500 W/in/sup 3/ versus state-of-the-art 100 W/in/sup 3/).
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