Formation of ultra-shallow junctions with pre-amorphization implant and microwave annealing

Abstract

Microwave annealing was used for the activation of both n-and p-type ultra-shallow junctions, formed by pre-amorphization Ge implant followed by low energy n-and p-type dopant implant. The regrowth of a-Si layer was completed after 50 seconds microwave annealing. However, the EOR defects were still clearly visible even after 1200 seconds annealing. The maximum fraction of hall electrical activation was 29.1% for BF2-implanted samples and 79.4% for As-implanted ones. Dopant deactivation occurred when the annealing time was longer than 100 seconds.