T. Tsuchizawa, H. Iriguchi, C. Takahashi, M. Shimada, S. Uchiyama, M. Oda
{"title":"ECR etching of /spl alpha/-Ta for x-ray mask absorber using chlorine and fluoride gas mixture","authors":"T. Tsuchizawa, H. Iriguchi, C. Takahashi, M. Shimada, S. Uchiyama, M. Oda","doi":"10.1109/IMNC.2000.872617","DOIUrl":null,"url":null,"abstract":"We investigated the effect of using fluoride gas in ECR etching of /spl alpha/-Ta and confirmed that the addition of CF4 to Cl2 reduces the pattern roughness and can fabricate x-ray masks with pattern sizes of less than 100 nm. The results of CD uniformity will also be reported.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.2000.872617","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We investigated the effect of using fluoride gas in ECR etching of /spl alpha/-Ta and confirmed that the addition of CF4 to Cl2 reduces the pattern roughness and can fabricate x-ray masks with pattern sizes of less than 100 nm. The results of CD uniformity will also be reported.
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