Study of the effects of microwave interference on MOSFET devices in CMOS integrated circuits

Abstract

In this paper, we focus on the effects on n-channel enhancement mode MOSFET devices where the microwave interference is injected into the input/output leads of the devices. The injected microwave power significantly affects output current, transconductance, output conductance, and breakdown voltage for power levels above 10 dBm in the frequency range between 1 and 20 GHz. The power effects were observed to be suppressed at frequencies above 4 GHz for these devices indicating the possibility of ineffective RF power coupling to devices of this size at the higher frequency range.