Challenges and perspectives in the modeling of spin qubits

Y. Niquet, L. Hutin, B. Diaz, B. Venitucci, J. Li, V. Michal, G. T. Fern'andez-Bada, H. Jacquinot, A. Amisse, A. Aprá, R. Ezzouch, N. Piot, E. Vincent, C. Yu, S. Zihlmann, B. Brun-Barrière, V. Schmitt, É. Dumur, R. Maurand, X. Jehl, M. Sanquer, B. Bertrand, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Cassé, E. Catapano, P. Mortemousque, C. Thomas, Y. Thonnart, G. Billiot, A. Morel, J. Charbonnier, L. Pallegoix, D. Niegemann, B. Klemt, M. Urdampilleta, V. El Homsy, M. Nurizzo, E. Chanrion, B. Jadot, C. Spence, V. Thiney, B. Paz, S. de Franceschi, M. Vinet, T. Meunier
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引用次数: 4

Abstract

We discuss the status, challenges and perspectives of "Quantum CAD" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design, physics and variability of silicon-on-insulator qubits as an illustration.
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自旋量子比特建模的挑战与展望
我们讨论了“量子CAD”在自旋量子比特的设计和探索中的现状、挑战和前景。我们强调了与传统的微电子TCAD的异同,并重点介绍了绝缘体上硅量子比特的设计、物理和可变性。
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