Integration of millisecond and spike anneals for dopant activation optimization

Shiyu Sun, Shashank Sharma, K. V. Rao, B. Ng, D. Kouzminov, B. Colombeau, N. Variam, S. Muthukrishnan, A. Mayur, A. Brand
{"title":"Integration of millisecond and spike anneals for dopant activation optimization","authors":"Shiyu Sun, Shashank Sharma, K. V. Rao, B. Ng, D. Kouzminov, B. Colombeau, N. Variam, S. Muthukrishnan, A. Mayur, A. Brand","doi":"10.1109/IWJT.2013.6644512","DOIUrl":null,"url":null,"abstract":"The effects of anneal sequences (ms anneal followed by spike anneal vs. spike anneal followed by ms anneal) were explored. Substantial anneal sequence effects on dopant activation were also reported.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 13th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2013.6644512","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The effects of anneal sequences (ms anneal followed by spike anneal vs. spike anneal followed by ms anneal) were explored. Substantial anneal sequence effects on dopant activation were also reported.
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集成毫秒和尖峰退火优化掺杂剂激活
探讨了退火顺序的影响(ms退火后脉冲退火vs. spike退火后ms退火)。还报道了大量退火顺序对掺杂剂活化的影响。
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