Reliable extraction of metal gate work function by combining two electrical characterization methods

M. Charbonnier, J. Mitard, C. Leroux, G. Ghibaudo, V. Cosnier, P. Besson, F. Martin, G. Reimbold
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引用次数: 2

Abstract

In this paper, we extract the gate work function of metal/High-K stacks (WFM) with an internal photoemission (IPE) based method and a C(V) characterization method. We attempt to apply both of them on the same specially designed samples. We show that it leads to a better reliability of WFM and highlights new phenomena.
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结合两种电学表征方法可靠地提取金属闸门功函数
本文采用基于内部光电发射(IPE)的方法和C(V)表征方法提取了金属/高k堆叠(WFM)的栅极功函数。我们试图将这两种方法应用于同一种特殊设计的样品上。结果表明,该方法提高了WFM的可靠性,并突出了新的现象。
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