G. Gerosa, S. Curtis, M. D'Addeo, Bo Jiang, B. Kuttanna, F. Merchant, Binta Patel, M. H. Taufique, H. Samarchi
{"title":"A sub 2W low power IA Processor for Mobile Internet Devices in 45nm Hi-K metal gate CMOS","authors":"G. Gerosa, S. Curtis, M. D'Addeo, Bo Jiang, B. Kuttanna, F. Merchant, Binta Patel, M. H. Taufique, H. Samarchi","doi":"10.1109/ASSCC.2008.4708718","DOIUrl":null,"url":null,"abstract":"This paper describes a low power Intelreg Architecture (IA) processor specifically designed for mobile internet devices (MID). The design consists of an in-order pipeline capable of issuing 2 instructions per cycle supporting 2 threads, 32 KB instruction and 24 KB data L1 caches, independent integer and floating point execution units, a 512 KB L2 cache and a 533 MT/s dual-mode (GTL and CMOS) front-side-bus (FSB). The design contains 47 million transistors in a die size under 25 mm2 manufactured in a 9-metal 45 nm CMOS process. Thermal design power (TDP) consumption is measured at 2 W, 1.0 V, 90degC using a synthetic power-virus test at a frequency of 1.86 GHz.","PeriodicalId":143173,"journal":{"name":"2008 IEEE Asian Solid-State Circuits Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2008.4708718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
This paper describes a low power Intelreg Architecture (IA) processor specifically designed for mobile internet devices (MID). The design consists of an in-order pipeline capable of issuing 2 instructions per cycle supporting 2 threads, 32 KB instruction and 24 KB data L1 caches, independent integer and floating point execution units, a 512 KB L2 cache and a 533 MT/s dual-mode (GTL and CMOS) front-side-bus (FSB). The design contains 47 million transistors in a die size under 25 mm2 manufactured in a 9-metal 45 nm CMOS process. Thermal design power (TDP) consumption is measured at 2 W, 1.0 V, 90degC using a synthetic power-virus test at a frequency of 1.86 GHz.