{"title":"Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO2 Layer","authors":"Kohki Murakawa, N. Mayama, T. Mizuno","doi":"10.1109/ISSM55802.2022.10026911","DOIUrl":null,"url":null,"abstract":"We experimentally studied the influence of high temperature N2 annealing on the photoluminescence (PL) of SiC and Si quantum-dots (QDs) in SiO2 layer fabricated by hot ion implantation technique. We demonstrated the increase of PL intensity of SiC- and Si-QDs after N2 annealing, compared with that after Ar annealing, which is probably attributable to the reduction of dangling bond density at SiO2/QD interface terminated by N atom trapping.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM55802.2022.10026911","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We experimentally studied the influence of high temperature N2 annealing on the photoluminescence (PL) of SiC and Si quantum-dots (QDs) in SiO2 layer fabricated by hot ion implantation technique. We demonstrated the increase of PL intensity of SiC- and Si-QDs after N2 annealing, compared with that after Ar annealing, which is probably attributable to the reduction of dangling bond density at SiO2/QD interface terminated by N atom trapping.
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