Completely dielectrically isolated silicon for high voltage application produced by ZMR of poly Si on SiO/sub 2/

Abstract

The aim is to demonstrate that it is possible to create completely dielectrically isolated Si using the zone-melted recrystallization (ZMR) technique and that the material quality allows application to high-voltage devices. In the first case the seeding windows were etched into the thermal oxide in the area between the tub-shaped grooves. Polycrystalline silicon films of different thicknesses (up to 80 mu m) were deposited. In the second case a thin polycrystalline silicon film (1 mu m) acts as a connection between the single-crystalline substrate and poly-Si in the grooves. The seeding recrystallization results in single-crystalline silicon