{"title":"Simulation of Si-Ge BiCMOS ESD structures operation including spatial current instability mode","authors":"Vladislav Vashchenko, Peter J. Hopper","doi":"10.1109/MIEL.2002.1003364","DOIUrl":null,"url":null,"abstract":"A 2D simulation approach that takes into account the 3D effects of electro-thermal instability during ESD operation, has been presented. The method is used to provide physical evaluation of a safe operation regime of ESD protection structures and circuits. First results of ESD stress induced hot spot formation using 3D simulation have been presented for the case of a simplified snapback n-MOS device.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A 2D simulation approach that takes into account the 3D effects of electro-thermal instability during ESD operation, has been presented. The method is used to provide physical evaluation of a safe operation regime of ESD protection structures and circuits. First results of ESD stress induced hot spot formation using 3D simulation have been presented for the case of a simplified snapback n-MOS device.
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