A Reliable Cross-Point MLC ReRAM with Sneak Current Compensation

J. Baek, Sang-Yun Kim, Jae-Koo Park, Jae-Young Park, K. Kwon
{"title":"A Reliable Cross-Point MLC ReRAM with Sneak Current Compensation","authors":"J. Baek, Sang-Yun Kim, Jae-Koo Park, Jae-Young Park, K. Kwon","doi":"10.1109/IMW.2015.7150272","DOIUrl":null,"url":null,"abstract":"In this paper, a reliable cross-point MLC ReRAM is introduced and fully integrated with 350nm CMOS technology. Both resistance states and variations are widely investigated with different compliance current. The self-termination scheme is adopted to prevent overstress to switched cell in set operation. As a result of self termination, write failure is prohibited and the uniformity on LRS of 300 uA compliance improved 2.3 times. In order to deter the compliance current offset in set operation, a sneak current compensation scheme of which controlled by ADC is proposed.","PeriodicalId":107437,"journal":{"name":"2015 IEEE International Memory Workshop (IMW)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2015.7150272","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

In this paper, a reliable cross-point MLC ReRAM is introduced and fully integrated with 350nm CMOS technology. Both resistance states and variations are widely investigated with different compliance current. The self-termination scheme is adopted to prevent overstress to switched cell in set operation. As a result of self termination, write failure is prohibited and the uniformity on LRS of 300 uA compliance improved 2.3 times. In order to deter the compliance current offset in set operation, a sneak current compensation scheme of which controlled by ADC is proposed.
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具有潜流补偿的可靠的跨点MLC ReRAM
本文介绍了一种可靠的跨点MLC ReRAM,并与350nm CMOS技术完全集成。在不同的顺应电流下,电阻的状态和变化被广泛研究。采用自终止方案,防止开关单元在设定操作时产生过大应力。由于自终止,禁止了写失败,并且遵从300ua的LRS上的均匀性提高了2.3倍。为了防止在设定操作中产生顺应电流偏移,提出了一种由ADC控制的潜行电流补偿方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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